crossystem: allow last nvdata entry to be filled
Mosys used to have code (below), which led me to believe that we always try and leave the last entry unfilled: memset(blank, 0xff, VBNV_BLOCK_SIZE); for (index = 0; index < len / VBNV_BLOCK_SIZE; index++) { unsigned int offset = index * VBNV_BLOCK_SIZE; if (!memcmp(blank, &data[offset], VBNV_BLOCK_SIZE)) break; } if (index == 0) { lprintf(LOG_ERR, "VBNV is uninitialized\n"); return -1; } else if (index >= len) { <---- SEE NOTE lprintf(LOG_ERR, "VBNV is full\n"); <--- unreachable return -1; } else { return index - 1; } The statement at "SEE NOTE" will always be false, so this code fooled me to believe that we consider VBNV without a row of 0xFF*16 to be empty. And so I implemented and wrote unit tests for what I believed the correct behavior to be :/ Anyway, this is causing us issues since AP firmware does not implement it that way. So allow the last row to be filled. BUG=chromium:1112578 BRANCH=none TEST=unit tests Signed-off-by: Jack Rosenthal <jrosenth@chromium.org> Change-Id: Ib3da78eddef69a688d081cdb5391a25000dac9d3 Reviewed-on: https://chromium-review.googlesource.com/c/chromiumos/platform/vboot_reference/+/2402385 Reviewed-by: Hung-Te Lin <hungte@chromium.org>
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@ -685,8 +685,8 @@ static int vb2_nv_index(const uint8_t *buf, uint32_t buf_sz, int vbnv_size)
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break;
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}
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if (!index || index == buf_sz / vbnv_size) {
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fprintf(stderr, "VBNV is either uninitialized or corrupted.\n");
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if (!index) {
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fprintf(stderr, "VBNV is uninitialized.\n");
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return -1;
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}
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@ -737,7 +737,7 @@ int vb2_write_nv_storage_flashrom(struct vb2_context *ctx)
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}
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next_index = current_index + 1;
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if ((next_index + 1) * vbnv_size == flash_size) {
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if (next_index * vbnv_size == flash_size) {
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/* VBNV is full. Erase and write at beginning. */
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memset(flash_buf, 0xff, flash_size);
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next_index = 0;
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@ -147,12 +147,12 @@ static void test_read_ok_full(void)
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reset_test_data(&ctx, sizeof(test_nvdata_16b));
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for (int entry = 0; entry < fake_flash_entry_count - 2; entry++)
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for (int entry = 0; entry < fake_flash_entry_count - 1; entry++)
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memcpy(fake_flash_region + (entry * VB2_NVDATA_SIZE),
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test_nvdata_16b, sizeof(test_nvdata_16b));
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memcpy(fake_flash_region +
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((fake_flash_entry_count - 2) * VB2_NVDATA_SIZE),
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((fake_flash_entry_count - 1) * VB2_NVDATA_SIZE),
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test_nvdata2_16b, sizeof(test_nvdata2_16b));
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TEST_EQ(vb2_read_nv_storage_flashrom(&ctx), 0,
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@ -222,7 +222,7 @@ static void test_write_ok_full(void)
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reset_test_data(&ctx, sizeof(test_nvdata_16b));
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for (int entry = 0; entry < fake_flash_entry_count - 1; entry++)
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for (int entry = 0; entry < fake_flash_entry_count; entry++)
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memcpy(fake_flash_region + (entry * VB2_NVDATA_SIZE),
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test_nvdata_16b, sizeof(test_nvdata_16b));
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